Elastic properties of chemical-vapor-deposited monolayer MoS2, WS2, and their bilayer heterostructures.

نویسندگان

  • Kai Liu
  • Qimin Yan
  • Michelle Chen
  • Wen Fan
  • Yinghui Sun
  • Joonki Suh
  • Deyi Fu
  • Sangwook Lee
  • Jian Zhou
  • Sefaattin Tongay
  • Jie Ji
  • Jeffrey B Neaton
  • Junqiao Wu
چکیده

Elastic properties of materials are an important factor in their integration in applications. Chemical vapor deposited (CVD) monolayer semiconductors are proposed as key components in industrial-scale flexible devices and building blocks of two-dimensional (2D) van der Waals heterostructures. However, their mechanical and elastic properties have not been fully characterized. Here we report high 2D elastic moduli of CVD monolayer MoS2 and WS2 (∼170 N/m), which is very close to the value of exfoliated MoS2 monolayers and almost half the value of the strongest material, graphene. The 2D moduli of their bilayer heterostructures are lower than the sum of 2D modulus of each layer but comparable to the corresponding bilayer homostructure, implying similar interactions between the hetero monolayers as between homo monolayers. These results not only provide deep insight into understanding interlayer interactions in 2D van der Waals structures but also potentially allow engineering of their elastic properties as desired.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

van der Waals trilayers and superlattices: modification of electronic structures of MoS2 by intercalation.

We perform a comprehensive first-principles study of the electronic properties of van der Waals (vdW) trilayers via intercalating a two-dimensional (2D) monolayer (ML = BN, MoSe2, WS2, or WSe2) between a MoS2 bilayer to form various MoS2/ML/MoS2 sandwich trilayers. We find that the BN monolayer is the most effective sheet to decouple the interlayer vdW coupling of the MoS2 bilayer, and the resu...

متن کامل

Large area molybdenum disulphide- epitaxial graphene vertical Van der Waals heterostructures

Two-dimensional layered transition metal dichalcogenides (TMDCs) show great potential for optoelectronic devices due to their electronic and optical properties. A metal-semiconductor interface, as epitaxial graphene - molybdenum disulfide (MoS2), is of great interest from the standpoint of fundamental science, as it constitutes an outstanding platform to investigate the interlayer interaction i...

متن کامل

Large area chemical vapor deposition of monolayer transition metal dichalcogenides and their temperature dependent Raman spectroscopy studies.

We investigate the growth mechanism and temperature dependent Raman spectroscopy of chemical vapor deposited large area monolayer of MoS2, MoSe2, WS2 and WSe2 nanosheets up to 70 μm in lateral size. Further, our temperature dependent Raman spectroscopy investigation shows that softening of Raman modes as temperature increases from 80 K to 593 K is due to the negative temperature coefficient and...

متن کامل

Separating electrons and holes by monolayer increments in van der Waals heterostructures

Since the discovery of graphene and its outstanding chemical, optical, and mechanical properties, other layered materials have been fiercely hunted for throughout various techniques. Thanks to their van der Waals interaction, acting as weak glue, different types of layered materials with mismatched lattices can be stacked with high quality interfaces. The properties of the resulting multilayer ...

متن کامل

Vertical and in-plane heterostructures from WS2/MoS2 monolayers.

Layer-by-layer stacking or lateral interfacing of atomic monolayers has opened up unprecedented opportunities to engineer two-dimensional heteromaterials. Fabrication of such artificial heterostructures with atomically clean and sharp interfaces, however, is challenging. Here, we report a one-step growth strategy for the creation of high-quality vertically stacked as well as in-plane interconne...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Nano letters

دوره 14 9  شماره 

صفحات  -

تاریخ انتشار 2014